The new IGBTs STGW30N120KD and the STGW40N120KD are Insulated Gate Bipolar Transistors that have low energy loss when conducting and also reduce losses while switching. Rated for 1200V operation, the series allows use at higher AC line voltages such as 440V or 480V and join ST’s existing 600V low-loss IGBTs. The devices are designated for applications up to 30A and 40A. They are available at distributor Rutronik now.

These IGBTs achieve power savings using ST’s PowerMESH™ process, and deliver greater all-round energy efficiency. Lower switching losses allow a higher operating frequency, which, in turn, permits smaller and lower-cost components in power-control circuits. The compact industry-standard TO-247
package saves component count by also integrating the ultra-fast freewheeling diode required by most circuits. The 1200V IGBTs are capable to surviving short circuits lasting up to 10 microseconds making them resistant to common causes of motor-controller failures, such as an error in the gate drive signal, shorting at grounding, and breakdown of motor phase-to-phase insulation.

All product information stated in the current press release is based on the franchise situation in Germany. Country specific variations may therefore be possible.
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